Positron Annihilation Due to Silicon Vacancies in 3C and 6H SiC Epitaxial Layers Induced by 1 MeV Electron Irradiation
- 22 January 2001
- journal article
- research article
- Published by Wiley in Physica Status Solidi (b)
- Vol. 223 (2) , R8-R10
- https://doi.org/10.1002/1521-3951(200101)223:2<r8::aid-pssb99998>3.0.co;2-n
Abstract
No abstract availableKeywords
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