Unified extraction method for amorphous and polycrystalline TFT above threshold model parameters

Publisher Website

25 June 2003

conference paper
Published by Institute of Electrical and Electronics Engineers (IEEE)

https://doi.org/10.1109/iccdcs.2002.1004027

Abstract

No abstract available

Keywords

This publication has 2 references indexed in Scilit:

New procedure for the extraction of basic a-Si:H TFT model parameters in the linear and saturation regions
Solid-State Electronics, 2001
Unified model for short-channel poly-Si TFTs
Solid-State Electronics, 1999