Lattice sites of arsenic ions implanted in diamond
- 15 October 1995
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 78 (8) , 5180-5182
- https://doi.org/10.1063/1.359753
Abstract
The lattice sites of As ions implanted in diamond and the annealing of implantation damage were investigated in emission channeling measurements. A dose of 1.0×1013 cm−2 73Se ions was implanted into IIa diamond at 300 K with an energy of 60 keV. 73Se (t12=7.1 h) decays to 73As (t1/2=80 d), which in turn decays to excited states in 73Ge. Channeling effects were measured on conversion electrons emitted in the 73Ge decay. Annealing studies in the range 873–1673 K showed an annealing stage of the implantation damage setting in at 1100 K. Comparison of the measured effects with simulations based on the dynamical theory of electron diffraction showed that after annealing at temperatures above 1100 K, 55(5)% of the implanted ions were located on substitutional lattice sites.This publication has 8 references indexed in Scilit:
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