Damage formation and substitutionality in 75As++-implanted diamond
- 15 September 1991
- journal article
- conference paper
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 70 (6) , 2986-2990
- https://doi.org/10.1063/1.349326
Abstract
Rutherford backscattering spectrometry (RBS) has been used to study damage formation and substitutionality in synthetic diamonds implanted with 250‐keV 75As++ at either 600 °C or room temperature. Lattice damage following implantation at 600 °C was substantially less than damage following room‐temperature implantation and appears to be composed of a higher fraction of extended defects. A significant portion of the As implanted at 600 °C was found to be in substitutional lattice sites with substitutional fractions as high as 50%. Changing the ion flux by three orders of magnitude during high‐temperature implantation had no effect on either residual damage or substitutionality as indicated by the RBS analysis.This publication has 13 references indexed in Scilit:
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