Low temperature annealing of ion-implantation-induced defects in GaAs by minority carrier injection

1 November 1993

journal article
research article
Published by AIP Publishing in Applied Physics Letters

Vol. 63 (18) , 2525-2527
https://doi.org/10.1063/1.110470

Abstract

This letter demonstrates that minority‐carrier injection entirely removes ion‐implantation‐ induced defects in GaAs at temperatures as low as 200 °C, where no annealing is observed as a result of a simple thermal annealing. The enhancement mechanism is discussed within the framework of recombination‐enhanced defect reaction. The present findings have opened the door to ‘‘room temperature semiconductor material processing.’’

Keywords

This publication has 3 references indexed in Scilit:

Room temperature damage removal from InP by optical pumping
Applied Physics Letters, 1992
Recovery of damaged GaAs diodes by minority carrier injection
Semiconductor Science and Technology, 1992
Anisotropic-Defect Introduction in GaAs by Electron Irradiation
Physical Review Letters, 1981