Room temperature damage removal from InP by optical pumping

3 August 1992

journal article
research article
Published by AIP Publishing in Applied Physics Letters

Vol. 61 (5) , 546-548
https://doi.org/10.1063/1.107857

Abstract

Removal of ion‐implantation‐induced damage in InP is observed to a considerable extent by optical pumping using argon ion laser irradiation at room temperature. The damage takes the form of recombination, scattering, and compensation centers, which were generated by Be implantation with dose of 10¹⁰–10¹²/cm². We find that minority carrier injection by optical pumping is an attractive alternative to technologies based on a thermal annealing approach for the removal of these centers.

Keywords

This publication has 4 references indexed in Scilit:

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