Investigation and optimization of InGaAs/InP heterointerfaces grown by chemical beam epitaxy using spectroscopic ellipsometry and photoluminescence
- 1 March 1992
- journal article
- Published by Springer Nature in Journal of Electronic Materials
- Vol. 21 (3) , 269-275
- https://doi.org/10.1007/bf02660453
Abstract
No abstract availableKeywords
This publication has 8 references indexed in Scilit:
- Quantum-well structures of InAlP/InGaP grown by gas-source molecular-beam epitaxyJournal of Applied Physics, 1991
- Modeling AlxGa1−xAs optical constants as functions of compositionJournal of Applied Physics, 1990
- Application of spectroscopic ellipsometry to complex samplesApplied Physics Letters, 1988
- Spectroscopic ellipsometry study of InP, GaInAs, and GaInAs/InP heterostructuresJournal of Applied Physics, 1986
- Gas source MBE of InP and GaxIn1−xPyAs1−y : Materials properties and heterostructure lasersJournal of Vacuum Science & Technology B, 1985
- Analysis of ion-implanted GaAs by spectroscopic ellipsometrySurface Science, 1983
- Optical properties of from 1.5 to 6.0 eV determined by spectroscopic ellipsometryPhysical Review B, 1982
- Investigation of effective-medium models of microscopic surface roughness by spectroscopic ellipsometryPhysical Review B, 1979