Spectroscopic ellipsometry study of InP, GaInAs, and GaInAs/InP heterostructures
- 15 March 1986
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 59 (6) , 2019-2025
- https://doi.org/10.1063/1.336383
Abstract
No abstract availableThis publication has 18 references indexed in Scilit:
- Determination of interfacial quality of GaAs-GaAlAs multi-quantum well structures using photoluminescence spectroscopyApplied Physics Letters, 1985
- Impurity trapping, interface structure, and luminescence of GaAs quantum wells grown by molecular beam epitaxyApplied Physics Letters, 1984
- Analysis of ion-implanted GaAs by spectroscopic ellipsometrySurface Science, 1983
- Structure of GaAs-Ga
1−
x
Al
x
As superlattices grown by metal-organic chemical vapour depositionElectronics Letters, 1983
- Stimulated emission in strained-layer quantum-well heterostructuresJournal of Applied Physics, 1983
- Chemical and structural analysis of the GaAs/AlGaAs heterojunctions by spectroscopic ellipsometryJournal of Vacuum Science & Technology B, 1983
- Extremely low threshold (AlGa)As graded-index waveguide separate-confinement heterostructure lasers grown by molecular beam epitaxyApplied Physics Letters, 1982
- New ultra-low-noise avalanche photodiode with separated electron and hole avalanche regionsElectronics Letters, 1982
- A New Field-Effect Transistor with Selectively Doped GaAs/n-AlxGa1-xAs HeterojunctionsJapanese Journal of Applied Physics, 1980
- Methods for drift stabilization and photomultiplier linearization for photometric ellipsometers and polarimetersReview of Scientific Instruments, 1978