An extended theory for hopping transport in a-Ge and a-Si
- 1 December 1983
- journal article
- Published by Elsevier in Journal of Non-Crystalline Solids
- Vol. 59-60, 53-56
- https://doi.org/10.1016/0022-3093(83)90523-9
Abstract
No abstract availableKeywords
This publication has 9 references indexed in Scilit:
- D.c. electrical conductivity of evaporated amorphous germanium—the low-temperature behaviourPhilosophical Magazine Part B, 1982
- The Hall effect in the variable-range-hopping regimePhilosophical Magazine Part B, 1981
- Amorphous germanium prepared in ultra high vacuum and measured in situ: the D.C. electrical conductivityJournal of Non-Crystalline Solids, 1980
- Temperature and thickness dependence of low temperature transport in amorphous silicon thin films: A comparison to amorphous germaniumSolid State Communications, 1975
- Phonon-Assisted Jump Rate in Noncrystalline SolidsPhysical Review Letters, 1974
- Thickness Dependence of Hopping Transport in Amorphous-Ge FilmsPhysical Review Letters, 1973
- dc Conductivity of Amorphous Germanium and the Structure of the PseudogapPhysical Review Letters, 1973
- A percolation treatment of dc hopping conductionJournal of Non-Crystalline Solids, 1972
- Conduction in glasses containing transition metal ionsJournal of Non-Crystalline Solids, 1968