Amorphous germanium prepared in ultra high vacuum and measured in situ: the D.C. electrical conductivity
- 1 January 1980
- journal article
- Published by Elsevier in Journal of Non-Crystalline Solids
- Vol. 35-36, 409-414
- https://doi.org/10.1016/0022-3093(80)90629-8
Abstract
No abstract availableKeywords
This publication has 12 references indexed in Scilit:
- Electronic properties of ion-bombarded evaporated germanium and siliconJournal of Physics C: Solid State Physics, 1978
- Phonon-assisted hopping due to interaction with both acoustical and optical phononsPhysical Review B, 1977
- Electrical, structural and optical properties of amorphous carbonJournal of Non-Crystalline Solids, 1977
- Use of hydrogenation in the study of the transport properties of amorphous germaniumPhysical Review B, 1976
- Temperature and thickness dependence of low temperature transport in amorphous silicon thin films: A comparison to amorphous germaniumSolid State Communications, 1975
- Influence of evaporation parameters on electrical properties of amorphous germanium and siliconPhysica Status Solidi (a), 1975
- Temperature- and field-dependence of hopping conduction in disordered systems, IIPhilosophical Magazine, 1975
- Temperature-and field-dependence of hopping conduction in disordered systemsPhilosophical Magazine, 1974
- Thickness Dependence of Hopping Transport in Amorphous-Ge FilmsPhysical Review Letters, 1973
- Impurity Conduction at Low ConcentrationsPhysical Review B, 1960