Influence of evaporation parameters on electrical properties of amorphous germanium and silicon
- 16 August 1975
- journal article
- research article
- Published by Wiley in Physica Status Solidi (a)
- Vol. 30 (2) , 511-520
- https://doi.org/10.1002/pssa.2210300210
Abstract
No abstract availableKeywords
This publication has 8 references indexed in Scilit:
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- Electronic transport and state distribution in amorphous Si filmsJournal of Non-Crystalline Solids, 1972
- Dependence of structure of amorphous germanium films on the angle of evaporationMaterials Research Bulletin, 1972
- The structure of amorphous GeJournal of Non-Crystalline Solids, 1972
- High-Resolution Electron Microscope Observation of Voids in Amorphous GePhysical Review Letters, 1971
- Influence of annealing on the optical properties of amorphous germanium filmsMaterials Research Bulletin, 1971
- Properties of glow-discharge deposited amorphous germanium and siliconJournal of Non-Crystalline Solids, 1970