Electronic properties of ion-bombarded evaporated germanium and silicon

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Abstract
Experimental results are presented for the electrical conductivity, optical absorption and photoconductivity of evaporated germanium and silicon, bombarded at 14K with self-ions and measured in situ. The conductivity in the ohmic region follows the Mott T-1/4 law (1969) extremely well, with ion bombardment increasing the conductivity by many orders of magnitude and decreasing the slope of the T-1/4 plots consistently. By using the hopping conduction model of Apsley and Hughes (1975), it is possible to determine independently the radius and density of the localised states at the Fermi level.