Liquid Phase Epitaxy of Miscible and Immiscible GaInPAs Alloys on (100)-Oriented GaPxAs1-x (x=0, 0.2, 0.4) Substrates
- 1 November 1990
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 29 (11R)
- https://doi.org/10.1143/jjap.29.2332
Abstract
A comprehensive study on miscible and immiscible GaInPAs LPE layers grown on (100)-oriented GaAs, GaP0.2As0.8 and GaP0.4As0.6 substrates is presented, including the studies by photoluminescence, X-ray diffraction, cathodoluminescence, Auger electron spectroscopy and transmission electron microscopy. Using three types of substrates with different lattice constants, we have obtained some new insights into the miscibility gap of GaInPAs alloys. It has been demonstrated that GaInPAs LPE layers inside the miscibility gap exhibit composition modulations and show peculiarities in luminescent spectra and X-ray rocking curves, the degree of which varies with layer thickness.Keywords
This publication has 45 references indexed in Scilit:
- A verification of immiscibility in InGaAsP quaternary alloysJournal of Crystal Growth, 1988
- Fabrication and lasing characteristics of 0.67 µm GaInAsP/AlGaAs visible lasers prepared by liquid phase epitaxy onIEEE Journal of Quantum Electronics, 1987
- Spinodal decomposition in InGaAsP epitaxial layersJournal of Crystal Growth, 1984
- LPE Growth of GaInAsP on (100)GaAs by a Two-Phase-Solution TechniqueJapanese Journal of Applied Physics, 1984
- Substrate-Induced Stabilization of GaInPAs Epitaxial Layers on GaAs and InPJapanese Journal of Applied Physics, 1984
- Liquid phase epitaxy of unstable alloys: Substrate-induced stabilization and connected effectsJournal of Vacuum Science & Technology B, 1983
- Energy band-gap shift with elastic strain in GaxIn1−xP epitaxial layers on (001) GaAs substratesJournal of Applied Physics, 1983
- Organometallic Vapor Phase Epitaxial Growth of In1-xGaxAsyP1-y on GaAsJapanese Journal of Applied Physics, 1983
- LPE Growth of In1-xGaxAs1-yPy with Narrow Photoluminescence Spectrum on GaAs (111)B SubstratesJapanese Journal of Applied Physics, 1982
- Miscibility gaps in quaternary III/V alloysJournal of Crystal Growth, 1982