LPE Growth of GaInAsP on (100)GaAs by a Two-Phase-Solution Technique
- 1 January 1984
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 23 (1A) , L52
- https://doi.org/10.1143/jjap.23.l52
Abstract
LPE growth condition and characteristic of GaInAsP lattice matched with (100)GaAs by a two-phase-solution growth technique is reported. This technique is applied to the LPE growth at T g=840°C and high quality Ga0.55In0.45As0.07P0.93 is obtained.Keywords
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