Plasma doping for silicon
- 1 November 1996
- journal article
- Published by Elsevier in Surface and Coatings Technology
- Vol. 85 (1-2) , 51-55
- https://doi.org/10.1016/0257-8972(96)02881-2
Abstract
No abstract availableKeywords
This publication has 7 references indexed in Scilit:
- Characteristics of sub-100-nm p/sup +//n junctions fabricated by plasma immersion ion implantationIEEE Electron Device Letters, 1993
- A comparison of three techniques for profiling ultra-shallow p+-n junctionsNuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 1993
- Sub-100 mn p+/n junction formation using plasma immersion ion implantationNuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 1991
- A comprehensive study on p/sup +/ polysilicon-gate MOSFET's instability with fluorine incorporationIEEE Transactions on Electron Devices, 1990
- New doping method for subhalf micron trench sidewalls by using an electron cyclotron resonance plasmaApplied Physics Letters, 1988
- Near‐Surface Damage and Contamination after CF 4 / H 2 Reactive Ion Etching of SiJournal of the Electrochemical Society, 1985
- Ion Bombardment of Silicon in a Glow DischargeJournal of Applied Physics, 1963