Transport properties of two-dimensional electron gases containing InAs self-assembled dots
- 26 October 1998
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 73 (17) , 2468-2470
- https://doi.org/10.1063/1.122484
Abstract
We present a study of the transport properties of two-dimensional electron gases formed in GaAs/AlGaAs heterostructures in which InAs self-assembled quantum dots have been inserted in the center of a GaAs quantum well. We observed that, while maintaining a constant carrier density, the mobility increased as the InAs dot density was reduced. The ratio of the transport to the quantum lifetime was measured to be approximately five with the dominant scattering mechanism attributed to short-range scattering from the inserted InAs dots.Keywords
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