Direct observation of crystallization in silicon by in situ high-resolution electron microscopy
Open Access
- 30 June 1993
- journal article
- Published by Elsevier in Ultramicroscopy
- Vol. 51 (1-4) , 41-45
- https://doi.org/10.1016/0304-3991(93)90134-j
Abstract
No abstract availableThis publication has 11 references indexed in Scilit:
- TEM in-situ investigations of the crystallization behaviour of amorphous silicon thin filmsUltramicroscopy, 1990
- An in Situ Hrem Study of Crystal Nucleation in Amorphous Silicon thin FilmsMRS Proceedings, 1990
- Retardation of nucleation rate for grain size enhancement by deep silicon ion implantation of low-pressure chemical vapor deposited amorphous silicon filmsJournal of Applied Physics, 1989
- Effects of trap-state density reduction by plasma hydrogenation in low-temperature polysilicon TFTIEEE Electron Device Letters, 1989
- Rapid nucleation in pulsed laser heated amorphous SiApplied Surface Science, 1989
- Recrystallization Mechanism for Solid Phase Growth of Poly-Si Films on Quartz SubstratesJapanese Journal of Applied Physics, 1988
- The development ofin situhigh-resolution electron microscopyActa Crystallographica Section A Foundations of Crystallography, 1988
- High-resolution transmission electron microscopy of silicon re-growth at controlled elevated temperaturesNature, 1986
- Heat of crystallization and melting point of amorphous siliconApplied Physics Letters, 1983
- Some observations on the amorphous to crystalline transformation in siliconJournal of Applied Physics, 1982