Dopant-selective photoenhanced wet etching of GaN
- 1 April 1998
- journal article
- Published by Springer Nature in Journal of Electronic Materials
- Vol. 27 (4) , 282-287
- https://doi.org/10.1007/s11664-998-0400-0
Abstract
No abstract availableKeywords
This publication has 17 references indexed in Scilit:
- Broad-area photoelectrochemical etching of GaNElectronics Letters, 1997
- Photoassisted Anodic Etching of Gallium NitrideJournal of the Electrochemical Society, 1997
- Inductively coupled plasma etching of GaNApplied Physics Letters, 1996
- Patterning of AlN, InN, and GaN in KOH-based solutionsJournal of Vacuum Science & Technology A, 1996
- Room-temperature photoenhanced wet etching of GaNApplied Physics Letters, 1996
- Study of chemically assisted ion beam etching of GaN using HCl gasApplied Physics Letters, 1995
- Reactive ion etching of gallium nitride in silicon tetrachloride plasmasa)Applied Physics Letters, 1993
- Dry and wet etching characteristics of InN, AlN, and GaN deposited by electron cyclotron resonance metalorganic molecular beam epitaxyJournal of Vacuum Science & Technology A, 1993
- Chemical Etching of Indium NitrideJournal of the Electrochemical Society, 1992
- Disk hydrogen plasma assisted chemical vapor deposition of aluminum nitrideApplied Physics Letters, 1988