Li-acceptor doping in ZnS/GaAs by post-heated molecular beam epitaxy
- 1 May 1995
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 150, 817-822
- https://doi.org/10.1016/0022-0248(95)80053-f
Abstract
No abstract availableKeywords
This publication has 4 references indexed in Scilit:
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- Low-temperature epitaxial growth of Zn chalcogenides on GaAs(001) by postheated molecular beamsJournal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 1993
- Low temperature molecular beam epitaxial growth of ZnS/GaAs(001) by using elemental sulfur sourceJournal of Crystal Growth, 1993
- Analysis of reflection high-energy electron-diffraction data from reconstructed semiconductor surfacesPhysical Review B, 1984