Auto-doping of Ga in ZnSe/GaAs layers grown at low temperatures by post-heated molecular beam epitaxy
- 2 April 1994
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 138 (1-4) , 110-113
- https://doi.org/10.1016/0022-0248(94)90789-7
Abstract
No abstract availableKeywords
This publication has 7 references indexed in Scilit:
- Generation and Evaluation of Post-Heated Zinc and Selenium Molecular BeamsJapanese Journal of Applied Physics, 1993
- Low-temperature epitaxial growth of Zn chalcogenides on GaAs(001) by postheated molecular beamsJournal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 1993
- Compensation processes in nitrogen doped ZnSeApplied Physics Letters, 1992
- Planar doping of p-type ZnSe layers with lithium grown by molecular beam epitaxyJournal of Crystal Growth, 1992
- Doping of nitrogen acceptors into ZnSe using a radical beam during MBE growthJournal of Crystal Growth, 1991
- Ionization energy of the shallow nitrogen acceptor in zinc selenidePhysical Review B, 1983
- Donor bound-exciton excited states in zinc selenidePhysical Review B, 1981