Measurement of diffusion length in CuInSe2 and CdS by the electron beam induced current method
- 1 October 1980
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 51 (10) , 5375-5379
- https://doi.org/10.1063/1.327453
Abstract
The minority‐carrier diffusion length Le for electrons in p‐CuInSe2 was determined by analyzing the magnitude of the electron beam induced current (EBIC) as a function of distance from the p/n junction in an n‐CdS/p‐CuInSe2 solar cell whose solar energy conversion efficiency was about 8%. Data obtained for electron beam energies of 10, 20, and 30 keV showed that Le was at least 0.92 μm. Analysis of the data in terms of a model in which the injection process is approximated by a point source results in a value of Le ∼2.5 μm and a surface recombination velocity of about 1.4×106 cm/sec on a as‐cut surface. The analysis leads to the inference that the ’’point source’’ is located at a depth equal to about 0.06 times the electron range below the surface on which the beam is incident.This publication has 8 references indexed in Scilit:
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