Hole diffusion length in high purity n-GaAs
- 31 August 1972
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 15 (8) , 865-868
- https://doi.org/10.1016/0038-1101(72)90022-6
Abstract
No abstract availableThis publication has 12 references indexed in Scilit:
- Evaluation of epitaxial n-GaAs for nuclear radiation detectionNuclear Instruments and Methods, 1971
- Some observations on microplasmas in P-I-N diodesSolid-State Electronics, 1971
- Direct Measurement of Diffusion Length in GaAs by α ParticlesJournal of Applied Physics, 1971
- Relaxation oscillations and recombination in epitaxial N-type gallium arsenideSolid-State Electronics, 1971
- Determination of the diffusion length of the minority carriers in electron-beam-excited n-type GaAsPhysica Status Solidi (a), 1971
- High purity GaAs by liquid phase epitaxySolid State Communications, 1969
- Optical Properties of n-Type GaAs. I. Determination of Hole Diffusion Length from Optical Absorption and Photoluminescence MeasurementsJournal of Applied Physics, 1969
- Cathodoluminescence at p-n Junctions in GaAsJournal of Applied Physics, 1965
- Measurement of the Lifetime of Minority Carriers in Semiconductors with a Scanning Electron MicroscopeJapanese Journal of Applied Physics, 1965
- Direct recombination in GaAs and some consequences in transistor designSolid-State Electronics, 1961