Relaxation oscillations and recombination in epitaxial N-type gallium arsenide
- 28 February 1971
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 14 (2) , 167-174
- https://doi.org/10.1016/0038-1101(71)90091-8
Abstract
No abstract availableKeywords
This publication has 7 references indexed in Scilit:
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- Relaxation oscillations due to impact ionisation in epitaxial sheet-type Gunn oscillatorsElectronics Letters, 1969
- Recombination Processes following Impact Ionization by High-Field Domains in Gallium ArsenideJournal of Applied Physics, 1967
- Localized temporary increase in material conductivity following impact ionization in a Gunn-effect domainIEEE Transactions on Electron Devices, 1967
- The role of acceptors in the luminescence of n-type GaAsJournal of Physics and Chemistry of Solids, 1967