Absorption and luminescence transitions involving excited hole states of excitons bound to lithium donors in silicon
- 28 June 1979
- journal article
- Published by IOP Publishing in Journal of Physics C: Solid State Physics
- Vol. 12 (12) , L485-L489
- https://doi.org/10.1088/0022-3719/12/12/007
Abstract
No abstract availableKeywords
This publication has 16 references indexed in Scilit:
- Systematics of bound excitons and bound multiexciton complexes for shallow donors in siliconSolid State Communications, 1978
- Luminescence of bound exciton and bound multiexciton complexes in Si:LiSolid State Communications, 1978
- Excitation density dependence of the luminescence from bound multi-exciton complexes in phosphorus doped siliconJournal of Physics C: Solid State Physics, 1978
- Bound-exciton absorption in Si:Al, Si:Ga, and Si:InPhysical Review B, 1978
- Luminescence associated with transitions from an excited state of the bound excitons in P, As, Sb and Bi doped SiJournal of Physics C: Solid State Physics, 1977
- Absorption due to the creation of bound excitons in phosphorus-doped siliconJournal of Physics C: Solid State Physics, 1977
- A shell model of bound multiexciton complexes in siliconCanadian Journal of Physics, 1977
- The use of the Weierstrass sphere geometry in luminescence spectroscopyJournal of Physics D: Applied Physics, 1977
- A new model for bound multiexciton complexesSolid State Communications, 1977
- Excitation Spectra of Lithium Donors in Silicon and GermaniumPhysical Review B, 1965