Absorption due to the creation of bound excitons in phosphorus-doped silicon
- 14 November 1977
- journal article
- Published by IOP Publishing in Journal of Physics C: Solid State Physics
- Vol. 10 (21) , L601-L604
- https://doi.org/10.1088/0022-3719/10/21/003
Abstract
No abstract availableKeywords
This publication has 12 references indexed in Scilit:
- Temperature dependence of anomalous structure in the derivative absorption spectra of Si:PSolid State Communications, 1977
- A new model for bound multiexciton complexesSolid State Communications, 1977
- Donor Exciton Satellites in Cubic Silicon Carbide: Multiple Bound Excitons RevisitedPhysical Review Letters, 1976
- Observation of free-exciton two-electron transitions in wavelength-derivative absorption spectra of impurity-doped siliconPhysical Review B, 1975
- Bound multiple-exciton complexes in silicon at high doping levels?Solid State Communications, 1974
- New photoluminescence line-series spectra attributed to decay of multiexciton complexes bound to Li, B, and P centers in SiPhysical Review B, 1974
- Evidence for Bound Multiple-Exciton Complexes in SiliconPhysical Review Letters, 1973
- Absorption due to Bound Excitons in SiliconPhysical Review B, 1967
- New Radiative Recombination Processes Involving Neutral Donors and Acceptors in Silicon and GermaniumPhysical Review B, 1967
- Optical Determination of the Symmetry of the Ground States of Group-V Donors in SiliconPhysical Review B, 1965