Buried heterostructure AlxGa1−xAs-GaAs quantum well lasers by Ge diffusion from the vapor
- 7 March 1988
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 52 (10) , 825-827
- https://doi.org/10.1063/1.99296
Abstract
Data are presented on a method to diffuse Ge into quantum well AlxGa1−xAs‐GaAs crystals from a vapor source, thus effecting impurity‐induced layer disordering, and shift from lower to higher gap. The Ge diffusion is characterized on undoped GaAs by using secondary ion mass spectroscopy and capacitance‐voltage electrochemical profiling. The layer disordering with Ge is used to fabricate 5‐μm‐wide buried heterostructure quantum well lasers (250 μm long) with continuous wave thresholds as low as 7 mA and output powers of greater than 90 mW (both facets).Keywords
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