Hybrid Protective Device for MOS-LSI Chips
- 1 September 1976
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Parts, Hybrids, and Packaging
- Vol. 12 (3) , 172-175
- https://doi.org/10.1109/tphp.1976.1135132
Abstract
No abstract availableKeywords
This publication has 7 references indexed in Scilit:
- Electrostatic Gate Protection using an Arc Gap Device8th Reliability Physics Symposium, 1973
- A low resistance protection diode for MIS circuitsPublished by Institute of Electrical and Electronics Engineers (IEEE) ,1973
- Source-drain breakdown in an insulated gate, field-effect transistorPublished by Institute of Electrical and Electronics Engineers (IEEE) ,1973
- Second-breakdown phenomena in avalanching silicon-on-sapphire diodesIEEE Transactions on Electron Devices, 1972
- Gate protection of MIS devicesIEEE Transactions on Electron Devices, 1971
- MOS Avalanche and Tunneling Effects in Silicon SurfacesJournal of Applied Physics, 1967
- Nanosecond-Pulse Microwave Breakdown in AirJournal of Applied Physics, 1966