Dry etching of GaN substrates for high-quality homoepitaxy
- 22 February 1999
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 74 (8) , 1123-1125
- https://doi.org/10.1063/1.123463
Abstract
Chemically assisted ion-beam etching (CAIBE) was used to remove subsurface damage from polished GaN bulk substrates prior to growth. Subsequently, GaN layers were deposited by metalorganic vapor phase epitaxy. Only the CAIBE-treated areas reveal a mirror-like surface without trenches, scratches, or holes. A dramatic increase of crystal quality is determined by low-temperature cathodoluminescence (CL). Compared to not CAIBE-treated material, the CL intensity is improved by a factor of 1000 and the linewidth is ten times narrower.Keywords
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