Swirl defects in float-zoned silicon crystals
- 1 February 1983
- journal article
- Published by Elsevier in Physica B+C
- Vol. 116 (1-3) , 139-147
- https://doi.org/10.1016/0378-4363(83)90241-3
Abstract
No abstract availableKeywords
This publication has 22 references indexed in Scilit:
- Sources of oxidation-induced stacking faults in Czochralski silicon wafersApplied Physics Letters, 1976
- Topographic observation of micro defects (e.g.`swirls') in nearly perfect crystalsJournal of Applied Crystallography, 1976
- The Elimination of Stacking Faults by Preoxidation Gettering of Silicon Wafers: III . Defect Etch Pit Correlation with p‐n Junction LeakageJournal of the Electrochemical Society, 1976
- The introduction of dislocations during the growth of floating-zone silicon crystals as a result of point defect condensationJournal of Crystal Growth, 1975
- Oxidation-induced stacking faults in silicon. I. Nucleation phenomenonJournal of Applied Physics, 1974
- Oxidation-induced stacking faults in silicon. II. Electrical effects in P N diodesJournal of Applied Physics, 1974
- Effects of Grown-ln and Process-Induced Defects in Single Crystal SiliconJournal of the Electrochemical Society, 1972
- New X-Ray Topographic Technique for Detection of Small Defects in Highly Perfect CrystalsJournal of Applied Physics, 1970
- VACANCY CLUSTERS IN DISLOCATION-FREE SILICONApplied Physics Letters, 1970
- Etch Pits Observed in Dislocation-Free Silicon CrystalsJapanese Journal of Applied Physics, 1966