Exciton Absorption in GaSe under Intense Excitation
- 15 July 1977
- journal article
- Published by Physical Society of Japan in Journal of the Physics Society Japan
- Vol. 43 (1) , 151-156
- https://doi.org/10.1143/jpsj.43.151
Abstract
No abstract availableThis publication has 13 references indexed in Scilit:
- Luminescence due to Exciton-Electron and Exciton-Exciton Collisions in GaSeJournal of the Physics Society Japan, 1976
- Luminescence Spectra Due to Exciton-Exciton Collisions in Semiconductors. II. Stimulated Emission SpectraJournal of the Physics Society Japan, 1976
- Collision broadening in the exciton gas outside the electron-hole droplets in GePhysical Review B, 1976
- GaSe: A layer compound with anomalous valence band anisotropySolid State Communications, 1974
- Impurity effects on low temperature photoluminescence of GaSePhysica Status Solidi (a), 1974
- Hot Excitons in Highly Excited CdSPhysical Review Letters, 1972
- Exciton binding energies of layer‐type semiconductors GaSe and GaTePhysica Status Solidi (b), 1971
- Induced Absorption in the Presence of High Electronic ExcitationPhysical Review Letters, 1971
- Temperature-modulated reflectance of GaSe at the ground state exciton linePhysica Status Solidi (b), 1971
- Radiative Recombination in Highly Excited CdSPhysical Review B, 1969