MOS capacitor on 4H-SiC as a nonvolatile memory element
- 7 August 2002
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Electron Device Letters
- Vol. 23 (7) , 404-406
- https://doi.org/10.1109/led.2002.1015217
Abstract
Nonvolatile memory characteristics of MOS capacitors are presented in this letter. The MOS capacitors have been fabricated on N-type 4H SiC substrate with nitrided oxide-semiconductor interface. The charge-retention time is in the order of 4.6/spl times/10/sup 9/ years, as determined by thermally activated (275-355/spl deg/C) capacitance-transient measurements and extrapolation to room temperature. The estimated activation energy of the charge-generation processes is 1.6 eV. The results and the analysis presented in this letter demonstrate that 4H SiC MOS capacitors can be used as a memory element in nonvolatile RAMs.Keywords
This publication has 9 references indexed in Scilit:
- Effects of nitridation in gate oxides grown on 4H-SiCJournal of Applied Physics, 2001
- Physical properties of N2O and NO-nitrided gate oxides grown on 4H SiCApplied Physics Letters, 2001
- Electrical characterization of ONO triple dielectric in SONOS nonvolatile memory devicesSolid-State Electronics, 2001
- Investigation of nitric oxide and Ar annealed SiO2/SiC interfaces by x-ray photoelectron spectroscopyJournal of Applied Physics, 1999
- Dielectrics in microelectronics — problems and perspectivesJournal of Non-Crystalline Solids, 1995
- A vertically integrated bipolar storage cell in 6H silicon carbide for nonvolatile memory applicationsIEEE Electron Device Letters, 1994
- Dynamic charge storage in 6H silicon carbideApplied Physics Letters, 1992
- The potential of diamond and SiC electronic devices for microwave and millimeter-wave power applicationsProceedings of the IEEE, 1991
- Statistics of the Recombinations of Holes and ElectronsPhysical Review B, 1952