Electrical characterization of ONO triple dielectric in SONOS nonvolatile memory devices
- 1 January 2001
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 45 (1) , 47-51
- https://doi.org/10.1016/s0038-1101(00)00194-5
Abstract
No abstract availableKeywords
This publication has 9 references indexed in Scilit:
- Observation and characterization of near-interface oxide traps with C-V techniquesIEEE Transactions on Electron Devices, 1995
- Theory and application of charge pumping for the characterization of Si-SiO/sub 2/ interface and near-interface oxide trapsIEEE Transactions on Electron Devices, 1994
- Study of thin gate oxides grown in an ultra-dry/clean triple-wall oxidation furnace systemJournal of Electronic Materials, 1990
- Time dependence of interface trap formation in MOSFETs following pulsed irradiationIEEE Transactions on Nuclear Science, 1988
- A reliable approach to charge-pumping measurements in MOS transistorsIEEE Transactions on Electron Devices, 1984
- Thermal oxidation of silicon in various oxygen partial pressures diluted by nitrogenJournal of Applied Physics, 1977
- Characterization of thin-oxide MNOS memory transistorsIEEE Transactions on Electron Devices, 1972
- Structure analysis of silicon dioxide films formed by oxidation of silaneJournal of Applied Physics, 1972
- Formation of 20–25Å Thermal Oxide Films on Silicon at 950°–1140°CJournal of the Electrochemical Society, 1971