Theory and application of charge pumping for the characterization of Si-SiO/sub 2/ interface and near-interface oxide traps
- 1 July 1994
- journal article
- research article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices
- Vol. 41 (7) , 1213-1216
- https://doi.org/10.1109/16.293349
Abstract
A generalized charge pumping model has been developed which extends the use of charge pumping from a study of traps at the Si-SiO2 interface to a study of traps in the oxide. The analytical model, based on tunneling theory, allows the spatial distribution of near-interface oxide traps to be determined from variable frequency charge pumping data. Profiling of near-interface oxide traps in irradiated MOSFET's as well as SONOS nonvolatile memory devices is presented.Keywords
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