Study of thin gate oxides grown in an ultra-dry/clean triple-wall oxidation furnace system
- 1 May 1990
- journal article
- Published by Springer Nature in Journal of Electronic Materials
- Vol. 19 (5) , 487-493
- https://doi.org/10.1007/bf02658010
Abstract
No abstract availableKeywords
This publication has 19 references indexed in Scilit:
- Effect of SiO2 surface chemistry on the oxidation of siliconApplied Physics Letters, 1989
- Improvement of hardness of MOS capacitors to electron-beam irradiation and hot-electron injection by ultradry oxidation of siliconIEEE Electron Device Letters, 1989
- Electron and hole traps in SiO/sub 2/ films thermally grown on Si substrates in ultra-dry oxygenIEEE Transactions on Electron Devices, 1988
- Time-dependent dielectric breakdown of ultra-thin silicon oxideIEEE Electron Device Letters, 1987
- Time-dependent-dielectric breakdown of thin thermally grown SiO2filmsIEEE Transactions on Electron Devices, 1985
- The effects of water on oxide and interface trapped charge generation in thermal SiO2 filmsJournal of Applied Physics, 1981
- Dielectric breakdown in electrically stressed thin films of thermal SiO2Journal of Applied Physics, 1978
- Design of ion-implanted MOSFET's with very small physical dimensionsIEEE Journal of Solid-State Circuits, 1974
- Comparison of step and ramp voltage breakdown tests in aluminum oxide filmsThin Solid Films, 1972
- A quasi-static technique for MOS C-V and surface state measurementsSolid-State Electronics, 1970