Effect of SiO2 surface chemistry on the oxidation of silicon
- 20 February 1989
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 54 (8) , 715-717
- https://doi.org/10.1063/1.101469
Abstract
We show that the retardation in the silicon oxidation rate associated with an ammonium hydroxide‐hydrogen peroxide preclean is due to trace amounts of aluminum in the region of the SiO2 surface. This aluminum and the retarding effect can be eliminated by removing less than 50 Å of thermal oxide in a HF:H2O etch. Depositing thin films of aluminum with thicknesses between 0.05 and 1 monolayers (ML) on HF cleaned surfaces produced the same retardation as the NH4OH based cleans. These results indicate the importance of the SiO2 surface in silicon oxidation.Keywords
This publication has 6 references indexed in Scilit:
- Effect of silicon surface cleaning procedures on oxidation kinetics and surface chemistryApplied Surface Science, 1987
- The Influence of Silicon Surface Cleaning Procedures on Silicon OxidationJournal of the Electrochemical Society, 1987
- Stress relaxation technique for thermally grown SiO2Applied Physics Letters, 1986
- Thermal oxidation of silicon: Chemisorption and linear rate constantJournal of Applied Physics, 1984
- Experimental Observations of the Chemistry of the SiO2/Si InterfaceIEEE Transactions on Nuclear Science, 1977
- General Relationship for the Thermal Oxidation of SiliconJournal of Applied Physics, 1965