Effect of rapid thermal reoxidation on the electrical properties of rapid thermally nitrided thin-gate oxides
- 1 April 1992
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices
- Vol. 39 (4) , 883-892
- https://doi.org/10.1109/16.127479
Abstract
No abstract availableThis publication has 36 references indexed in Scilit:
- Nitridation induced surface donor layer in silicon and its impact on the characteristics of n- and p-channel MOSFETsPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2003
- Channel hot-carrier stressing of reoxidized nitrided silicon dioxideIEEE Transactions on Electron Devices, 1990
- Interface state creation and charge trapping in the medium-to-high gate voltage range (V/sub d//2or=V/sub d/) during hot-carrier stressing of n-MOS transistorsIEEE Transactions on Electron Devices, 1990
- Nitridation and post-nitridation anneals of SiO/sub 2/ for ultrathin dielectricsIEEE Transactions on Electron Devices, 1990
- Study of the SiO2/Si interface endurance property during rapid thermal nitridation and reoxidation processingApplied Physics Letters, 1989
- Inversion layer mobility of MOSFETs with nitrided oxide gate dielectricsIEEE Transactions on Electron Devices, 1988
- Relationship between MOSFET degradation and hot-electron-induced interface-state generationIEEE Electron Device Letters, 1984
- Electron mobility in inversion and accumulation layers on thermally oxidized silicon surfacesIEEE Transactions on Electron Devices, 1980
- Origin of Interface States and Oxide Charges Generated by Ionizing RadiationIEEE Transactions on Nuclear Science, 1976
- Model for Radiation-Induced Charge Trapping and Annealing in the Oxide Layer of MOS DevicesJournal of Applied Physics, 1969