Heteroepitaxial GaAs layers on InP substrates: Radiative recombinations, strain relaxation, structural properties, and comparison with InP layers on GaAs
- 1 May 1992
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 71 (9) , 4502-4508
- https://doi.org/10.1063/1.351364
Abstract
No abstract availableThis publication has 16 references indexed in Scilit:
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