Efficient Green Electroluminescence from GaP p-n Junctions Grown by Liquid-Phase Epitaxy
- 1 May 1968
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 39 (6) , 2962-2963
- https://doi.org/10.1063/1.1656703
Abstract
No abstract availableThis publication has 6 references indexed in Scilit:
- Growth of Large Single Crystals of Gallium Phosphide from a Stoichiometric MeltJournal of the Electrochemical Society, 1968
- EFFICIENT VISIBLE ELECTROLUMINESCENCE AT 300°K FROM Ga1-xAlxAs p-n JUNCTIONS GROWN BY LIQUID-PHASE EPITAXYApplied Physics Letters, 1967
- Luminescence from GaP containing SiliconJournal of Applied Physics, 1967
- Formation of Built-in Light-emitting Junctions in Solution-grown GaP Containing Shallow Donors and AcceptorsIBM Journal of Research and Development, 1966
- Green Luminescence from Solution-grown Junctions in GaP Containing Shallow Donors and AcceptorsIBM Journal of Research and Development, 1966
- ELECTROLUMINESCENCE NEAR BAND GAP IN GALLIUM PHOSPHIDE CONTAINING SHALLOW DONOR AND ACCEPTOR LEVELSApplied Physics Letters, 1965