Identification of Growth Induced Planar Defects in Silicon
- 1 January 1985
- journal article
- Published by Springer Nature in MRS Proceedings
Abstract
No abstract availableKeywords
This publication has 8 references indexed in Scilit:
- Microscopic growth mechanisms of semiconductors: Experiments and modelsJournal of Crystal Growth, 1984
- The Feathering of Doping Striations in Semiconductor CrystalsJournal of the Electrochemical Society, 1982
- Dislocations as growth step sources in solution growth and their influence on interface structuresThin Solid Films, 1982
- Analysis of dislocations creating monomolecular growth stepsJournal of Crystal Growth, 1981
- A new preparation method for large area electron-transparent silicon samplesJournal of Physics E: Scientific Instruments, 1975
- Structure and Origin of Stacking Faults in Epitaxial SiliconJournal of Applied Physics, 1963
- The growth of crystals and the equilibrium structure of their surfacesPhilosophical Transactions of the Royal Society of London. Series A, Mathematical and Physical Sciences, 1951
- The influence of dislocations on crystal growthDiscussions of the Faraday Society, 1949