Electromigration on semiconductor surfaces
- 31 December 1992
- journal article
- Published by Elsevier in Surface Science Reports
- Vol. 15 (6-7) , 205-280
- https://doi.org/10.1016/0167-5729(92)90007-x
Abstract
No abstract availableKeywords
Funding Information
- Ministry of Education, Culture, Sports, Science and Technology
This publication has 75 references indexed in Scilit:
- Structure analysis of the Si(111)√3 × √3R30°-Ag surfacePhysical Review Letters, 1991
- Activation energy for surface diffusion of Si on Si(001): A scanning-tunneling-microscopy studyPhysical Review Letters, 1991
- Growth of metallic intermediate layer on Si(111) by surface electro-migrationSuperlattices and Microstructures, 1990
- Ab Initio Study of Elementary Processes in Silicon Homoepitaxy–Adsorption and Diffusion on Si(001)Japanese Journal of Applied Physics, 1990
- Electromigration of In Ultrathin Film on Si(111)Japanese Journal of Applied Physics, 1986
- Surface diffusion of adsorbatesSurface Science Reports, 1985
- Adatoms of indium on Si(111) surfaces: Application of reflection high energy electron diffraction to desorption experimentsThin Solid Films, 1982
- Diffuse interface in Si (substrate)-Au (evaporated film) systemApplied Physics Letters, 1973
- Low-temperature migration of silicon through metal films importance of silicon-;metal interfacePhysica Status Solidi (a), 1971
- The growth of crystals and the equilibrium structure of their surfacesPhilosophical Transactions of the Royal Society of London. Series A, Mathematical and Physical Sciences, 1951