Deep levels in zinc phosphide

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Abstract
Deep majority‐carrier traps have been studied by means of deep level transient spectroscopy (DLTS) in as‐grown Zn3P2 polycrystals (p‐type) grown either by sublimation or by iodine chemical transport using an automated digital DLTS system. Three main deep hole traps are present in both kinds of Zn3P2: hole traps with activation energy of 0.20±0.01 eV 0.36±0.005 eV, and 0.73±0.01 eV from the top of the valence band. In a few sublimation‐grown samples a 0.48±0.02 eV hole trap is detected. The concentration of these levels, however, exhibits a very strong dependence on the thermal history of the samples, since Mg from the Schottky contact easily diffuses into the bulk above 50 °C and affects the concentration of the levels.

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