Polycrystalline Zn3P2/Indium-Tin Oxide Solar Cells
- 1 October 1983
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 22 (10A) , L656
- https://doi.org/10.1143/jjap.22.l656
Abstract
Zinc phosphide (Zn3P2)/indium-tin oxide (ITO) heterojunction solar cells are fabricated by rf sputter depositing ITO on large grain polycrystalline Zn3P2 wafers. An AES analysis indicates that sputter etching of the Zn3P2 wafer surface before depositing ITO is of great importance in achieving a better performance as a solar cell. The passivation of Zn3P2 by reaction with atomic hydrogen is found to improve the cell performance significantly. Consequently, a power conversion efficiency of 2.1% (6 mm2 in active area) has been obtained without antireflection coating.Keywords
This publication has 8 references indexed in Scilit:
- Transport mechanisms for Mg/Zn3P2 junctionsJournal of Applied Physics, 1982
- Hydrogen passivation of a bulk donor defect (E c −0.36 eV) in GaAsJournal of Applied Physics, 1982
- Schottky solar cells on thin polycrystalline Zn3P2 filmsApplied Physics Letters, 1982
- Zinc phosphide-zinc oxide heterojunction solar cellsApplied Physics Letters, 1981
- Polycrystalline Zn3P2 Schottky barrier solar cellsApplied Physics Letters, 1981
- Optical properties of Zn3P2Journal of Applied Physics, 1979
- Spectral response measurements of minority-carrier diffusion length in Zn3P2Journal of Applied Physics, 1979
- Passivation of grain boundaries in polycrystalline siliconApplied Physics Letters, 1979