Auger and TEM Studies on the Contamination of Chemically Prepared GaAs Substrate Surfaces
- 1 January 1979
- book chapter
- Published by Springer Nature
Abstract
No abstract availableThis publication has 9 references indexed in Scilit:
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- Chemical preparation of GaAs surfaces and their characterization by Auger electron and x-ray photoemission spectroscopiesJournal of Heterocyclic Chemistry, 1977
- Auger Characterization of Chemically Etched GaAs SurfacesJournal of the Electrochemical Society, 1977
- Studies on Chemically Etched Silicon, Gallium Arsenide, and Gallium Phosphide Surfaces by Auger Electron SpectroscopyJapanese Journal of Applied Physics, 1976
- Crystallisation phenomena of native anodic oxides for GaAs devicesElectronics Letters, 1976
- GaAs surface chemistry – a reviewC R C Critical Reviews in Solid State Sciences, 1975
- Growth of Au Film on GaAs(110) Observed by LEED and AESJapanese Journal of Applied Physics, 1974
- Use of Auger Electron Spectroscopy in Determining the Effect of Carbon and Other Surface Contaminants on GaAs–Cs–O PhotocathodesJournal of Applied Physics, 1970
- Auger Electron Spectroscopy of Contaminated Gallium-Arsenide SurfacesJournal of Vacuum Science and Technology, 1970