Thermal recovery process of the midgap-state profile of light-soaked undoped hydrogenated amorphous silicon
- 23 January 1989
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 54 (4) , 344-346
- https://doi.org/10.1063/1.100964
Abstract
Changes of midgap-state profiles of light-soaked undoped hydrogenated amorphous silicon are measured in the process of a 150 °C annealing by transient heterojunction-monitored capacitance measurements. Monomolecular annealing kinetics are found to be suitable for explaining the results, and the thermal activation energy for annealing is determined at each energy position of midgap states. This activation energy decreases with an increase in the energy position measured from the conduction-band edge.Keywords
This publication has 9 references indexed in Scilit:
- A novel method for determining the gap-state profile and its application to amorphous Si1−xGex:H filmsJournal of Applied Physics, 1988
- The annealing behavior of light-induced defects in a-Si:HJournal of Applied Physics, 1988
- Amorphous Si and Si-based alloys from glow-discharge plasmaPublished by Walter de Gruyter GmbH ,1988
- Annealing of metastable defects in hydrogenated amorphous siliconPhysical Review B, 1986
- Intrinsic dangling-bond density in hydrogenated amorphous siliconPhysical Review B, 1985
- Kinetics of the metastable optically induced ESR ina-Si:HPhysical Review B, 1985
- Kinetics of the Staebler–Wronski effect in hydrogenated amorphous siliconApplied Physics Letters, 1984
- Ohmic Contact Properties of Magnesium Evaporated onto Undoped and P-doped a-Si: HJapanese Journal of Applied Physics, 1983
- Reversible conductivity changes in discharge-produced amorphous SiApplied Physics Letters, 1977