Interface excitations in layered structures with metallized surfaces

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Abstract
A theoretical investigation has been made of the interface excitations associated with the double inversion layers of semiconductor-insulator-semiconductor structure with metallized surfaces. The general dispersion relation has been derived using the local electromagnetic theory. The numerical computation is performed in the nonretardation limit (c→∞) for the structure assumed to be made up of n-type silicon-silicon-dioxide-p-type silicon. Theoretical results for finite oxide thickness with respect to separation of the metallic surfaces are shown. These excitations can be regarded as the uncoupled (for infinite oxide thickness) and coupled modes (for finite oxide thickness) whose components are the two-dimensional-electron-gas plasmon and the two-dimensional-hole-gas plasmon. The finiteness of the structure presents some interesting variations in the frequencies of the plasma modes.