Dissociative electron attachment of CH3Br on GaAs(110) by thermalized photoexcited substrate electrons

Abstract
By using kinetic-energy-resolved measurement of adsorbate fragmentation, we observe an electron-transfer reaction from the conduction band minimum of a semiconductor surface to a molecular adsorbate. Bond cleavage in the molecular system, CH3Br on GaAs(110), occurs through a mechanism analogous to gas-phase dissociative electron attachment.