Shallow junction formation by boron implantation with energies between 2 and 5 keV and rapid thermal annealing

This publication has 4 references indexed in Scilit:

• Use of ultra-low-energy BF2+ implantation and rapid annealing to avoid channeling effects in shallow junction formation
  Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 1987
• Amorphization implants and low temperature rapid thermal processing to form low sheet resistance, shallow junction, boron implanted layers
  Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 1987
• The precision implant 9000 beam line
  Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 1987
• 1—2-keV Boron implants into silicon
  IEEE Electron Device Letters, 1985