Lattice location of Si in ion implanted GaN
- 7 September 1998
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 73 (10) , 1406-1408
- https://doi.org/10.1063/1.121958
Abstract
The lattice location of Si in GaN has been investigated by ion channeling in combination with Rutherford backscattering spectrometry, particle induced x-ray emission, and nuclear reaction analysis. Metalorganic chemical vapor deposition grown GaN on c-plane sapphire substrates and implanted with Si28 at a dose of 7×1014 cm−2 with postimplant annealing were investigated. It was found that almost 100% of Si goes into the Ga site at 1100 °C. Our results directly indicate that the electrical activation of Si implanted GaN with postimplant annealing is due to the formation of substitutional Si at this temperature.Keywords
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