Coplanar Monolithic Silicon Impatt Transmitter
- 1 October 1991
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
Abstract
A coplanar W-band transmitter incorporating a monolithically integrated IMPATT diode in a self radiating slot line resonator has been designed and fabricated with molecular beam epitaxy (MBE) on a high resistivity silicon substrate. A pulsed radiated output power of 7 mW at 109 GHz was measured.Keywords
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