Material quality and design optimization for high efficiency GaAs solar cells
- 1 January 1988
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
Abstract
No abstract availableKeywords
This publication has 13 references indexed in Scilit:
- An approach toward 25-percent efficient GaAs heteroface solar cellsIEEE Transactions on Electron Devices, 1989
- Device processing and analysis of high efficiency GaAs cellsSolar Cells, 1988
- A new sequentially etched quantum-yield technique for measuring surface recombination velocity and diffusion lengths of solar cellsJournal of Applied Physics, 1987
- Semiconducting and other major properties of gallium arsenideJournal of Applied Physics, 1982
- Impurity band structure in degenerate semiconductors for both dense donors and acceptorsPhysica Status Solidi (a), 1979
- Interfacial recombination in GaAlAs–GaAs heterostructuresJournal of Vacuum Science and Technology, 1978
- Hole traps in bulk and epitaxial GaAs crystalsElectronics Letters, 1977
- Electron traps in bulk and epitaxial GaAs crystalsElectronics Letters, 1977
- Doping Dependence of Hole Lifetime in n-Type GaAsJournal of Applied Physics, 1971
- Statistics of the Recombinations of Holes and ElectronsPhysical Review B, 1952